RJK1003DPN-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 50A TO220ABA
$3.70
Available to order
Reference Price (USD)
1+
$3.70000
500+
$3.663
1000+
$3.626
1500+
$3.589
2000+
$3.552
2500+
$3.515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RJK1003DPN-A0#T2 by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RJK1003DPN-A0#T2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 125W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABA
- Package / Case: TO-220-3
Related Products
onsemi
NVMYS1D2N04CLTWG
Rohm Semiconductor
QS5U27TR
Infineon Technologies
AUIRFR9024NTRL
Microchip Technology
APT20M11JLL
Transphorm
TP65H035G4WS
onsemi
FQD2N90TM
IXYS
IXTA3N100D2HV
Toshiba Semiconductor and Storage
TK65S04N1L,LXHQ
Nexperia USA Inc.
PMN30XPAX
Vishay Siliconix