RJK1562DJE-00#Z0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 150V 1A TO92MOD
$0.84
Available to order
Reference Price (USD)
1+
$0.84000
500+
$0.8316
1000+
$0.8232
1500+
$0.8148
2000+
$0.8064
2500+
$0.798
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance RJK1562DJE-00#Z0 from Renesas Electronics America Inc, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RJK1562DJE-00#Z0 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Related Products
Diodes Incorporated
DMP1045UQ-7
Infineon Technologies
IPA60R125C6XKSA1
Microchip Technology
APT9M100B
Panjit International Inc.
PJE8438_R1_00001
Nexperia USA Inc.
PSMN1R5-30BLEJ
STMicroelectronics
STB11NM60T4
Infineon Technologies
IPD65R420CFDATMA1
Infineon Technologies
IAUC60N04S6N044ATMA1
Vishay Siliconix
SI1012CR-T1-GE3
Fairchild Semiconductor