RJK60S5DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 20A 4LDPAK
$14.80
Available to order
Reference Price (USD)
1+
$14.80000
500+
$14.652
1000+
$14.504
1500+
$14.356
2000+
$14.208
2500+
$14.06
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
RJK60S5DPE-00#J3 by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RJK60S5DPE-00#J3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LDPAK
- Package / Case: SC-83
Related Products
Panjit International Inc.
PJQ5468A_R2_00001
onsemi
FDD4N60NZ
onsemi
NVMFSC1D6N06CL
Fairchild Semiconductor
FQB6N50TM
Diodes Incorporated
ZVN4424A
Fairchild Semiconductor
FQP9N08L
NTE Electronics, Inc
NTE66
Infineon Technologies
IPA65R420CFD
NXP USA Inc.
PSMN1R9-40PL127
Nexperia USA Inc.