RM2305
Rectron USA
Rectron USA
MOSFET P-CH 20V 3A/4.1A SOT23
$0.05
Available to order
Reference Price (USD)
1+
$0.04900
500+
$0.04851
1000+
$0.04802
1500+
$0.04753
2000+
$0.04704
2500+
$0.04655
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RM2305 by Rectron USA. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RM2305 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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