RM2309E
Rectron USA
Rectron USA
MOSFET P-CHANNEL 30V SOT23
$0.05
Available to order
Reference Price (USD)
1+
$0.05400
500+
$0.05346
1000+
$0.05292
1500+
$0.05238
2000+
$0.05184
2500+
$0.0513
Exquisite packaging
Discount
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Boost your electronic applications with RM2309E, a reliable Transistors - FETs, MOSFETs - Single by Rectron USA. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RM2309E meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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