TK39N60W5,S1VF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 38.8A TO247
$8.50
Available to order
Reference Price (USD)
1+
$8.11000
30+
$6.65233
120+
$6.00325
510+
$5.02975
1,020+
$4.54300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with TK39N60W5,S1VF, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK39N60W5,S1VF for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPU80R2K8CEAKMA1
onsemi
FDME820NZT
Microchip Technology
VN2410L-G
Fairchild Semiconductor
IRFS730B
Microchip Technology
APT10045B2LLG
Infineon Technologies
IMZ120R090M1HXKSA1
onsemi
FDB8443
Sanken
FKV550N
onsemi
FDP083N15A-F102
Vishay Siliconix