RM35P30LDV
Rectron USA
Rectron USA
MOSFET P-CHANNEL 30V 35A TO252-2
$0.20
Available to order
Reference Price (USD)
1+
$0.19800
500+
$0.19602
1000+
$0.19404
1500+
$0.19206
2000+
$0.19008
2500+
$0.1881
Exquisite packaging
Discount
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Discover RM35P30LDV, a versatile Transistors - FETs, MOSFETs - Single solution from Rectron USA, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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