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RM3N700S4

Rectron USA
RM3N700S4 Preview
Rectron USA
MOSFET N-CHANNEL 700V 3A SOT223
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-2
  • Package / Case: TO-261-3

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