SPB80N06S2-08
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SPB80N06S2-08, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SPB80N06S2-08 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
NXP USA Inc.
BUK7E13-60E,127
onsemi
NTTFS4C05NTAG
Panjit International Inc.
PJL9407_R2_00001
UnitedSiC
UJ4C075023B7S
Renesas Electronics America Inc
RJK1576DPA-00#J5A
Vishay Siliconix
SI7686DP-T1-GE3
Infineon Technologies
BSB013NE2LXIXUMA1
Vishay Siliconix
SI2329DS-T1-GE3
Vishay Siliconix
SUD35N10-26P-GE3
onsemi