RM42P30DN
Rectron USA
Rectron USA
MOSFET P-CHANNEL 30V 42A 8DFN
$0.16
Available to order
Reference Price (USD)
1+
$0.15500
500+
$0.15345
1000+
$0.1519
1500+
$0.15035
2000+
$0.1488
2500+
$0.14725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RM42P30DN, a premium Transistors - FETs, MOSFETs - Single from Rectron USA. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RM42P30DN is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-PowerVDFN
Related Products
Toshiba Semiconductor and Storage
TK8A50D(STA4,Q,M)
Infineon Technologies
IPP80N06S405AKSA2
Panjit International Inc.
PJQ4465AP_R2_00001
Fairchild Semiconductor
FQPF32N12V2
Infineon Technologies
IPD12CN10NGATMA1
Toshiba Semiconductor and Storage
SSM6G18NU,LF
Diodes Incorporated
DMN6075S-13
Infineon Technologies
BSC027N06LS5ATMA1
Vishay Siliconix
SIR873DP-T1-GE3
onsemi