RM60N100DF
Rectron USA
Rectron USA
MOSFET N-CHANNEL 100V 60A 8DFN
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rectron USA presents RM60N100DF, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RM60N100DF delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 105W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
SI8483DB-T2-E1
Rohm Semiconductor
RSR025N05HZGTL
Diotec Semiconductor
DI070P04PQ
Panasonic Electronic Components
MTMF82310BBF
PN Junction Semiconductor
P1H06300D8
Infineon Technologies
IPN95R1K2P7ATMA1
STMicroelectronics
STP14NK50Z
Vishay Siliconix
IRFB9N60APBF-BE3
Infineon Technologies
IRLML0100TRPBF
Infineon Technologies