RM6A5N30S6
Rectron USA
Rectron USA
MOSFET N-CH 32V 6.5A SOT23-6
$0.05
Available to order
Reference Price (USD)
1+
$0.05200
500+
$0.05148
1000+
$0.05096
1500+
$0.05044
2000+
$0.04992
2500+
$0.0494
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RM6A5N30S6, a premium Transistors - FETs, MOSFETs - Single from Rectron USA. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RM6A5N30S6 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 32 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
Related Products
Fairchild Semiconductor
RFP15N05L
Diodes Incorporated
DMN3032LE-13
Fairchild Semiconductor
ISL9N312AS3ST
Toshiba Semiconductor and Storage
SSM3K36FS,LF
IXYS
IXTH450P2
Taiwan Semiconductor Corporation
TSM038N03PQ33 RGG
Infineon Technologies
IPP029N06NAKSA1
Diodes Incorporated
DMP2110UQ-13
Diodes Incorporated
DMT32M4LPSW-13
Infineon Technologies