RN1708,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
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Experience precision engineering with Toshiba Semiconductor and Storage's RN1708,LF Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Toshiba Semiconductor and Storage provides comprehensive technical resources for RN1708,LF integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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