RN2116,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with the RN2116,LXHF(CT by Toshiba Semiconductor and Storage, a standout in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are engineered for superior performance and longevity. Notable features include low noise, high frequency response, and excellent thermal characteristics. Suitable for audio amplifiers, LED drivers, and motor control circuits. Toshiba Semiconductor and Storage is committed to delivering high-quality components. Request a quote or additional information today!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
Rohm Semiconductor
DTD123EKT146
Toshiba Semiconductor and Storage
RN1106MFV,L3F
Micro Commercial Co
DTC114EE-TP
Nexperia USA Inc.
PDTA123JQCZ
Nexperia USA Inc.
PDTC143XQBZ
Rohm Semiconductor
DTA123JEBHZGTL
Diodes Incorporated
DDTA123YUA-7-F
Nexperia USA Inc.
PDTD123EQAZ
Toshiba Semiconductor and Storage
RN2401,LXHF
Infineon Technologies