RN4609(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.3W SM6
$0.49
Available to order
Reference Price (USD)
3,000+
$0.08820
6,000+
$0.07938
15,000+
$0.07056
30,000+
$0.06615
75,000+
$0.05880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Toshiba Semiconductor and Storage's RN4609(TE85L,F) advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Toshiba Semiconductor and Storage stands behind every RN4609(TE85L,F) unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
Related Products
onsemi
NSBC114EPDXV6T5G
onsemi
NSVBC143ZPDXV6T5G
Toshiba Semiconductor and Storage
RN4909FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4983,LF(CT
Panasonic Electronic Components
XN0621600L
Toshiba Semiconductor and Storage
RN4911FE,LXHF(CT
Rohm Semiconductor
IMH10AT110
Panasonic Electronic Components
NP0G3D200A
Nexperia USA Inc.
PQMH10Z
Toshiba Semiconductor and Storage