RN46A1(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR=22KOHM Q1BER
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
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Enhance your circuit designs with Toshiba Semiconductor and Storage's RN46A1(TE85L,F) Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust Toshiba Semiconductor and Storage's expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms, 10kOhms
- Resistor - Emitter Base (R2): 22kOhms, 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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