RN4986(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.30
Available to order
Reference Price (USD)
1+
$0.30000
500+
$0.297
1000+
$0.294
1500+
$0.291
2000+
$0.288
2500+
$0.285
Exquisite packaging
Discount
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Optimize your electronic designs with Toshiba Semiconductor and Storage's RN4986(T5L,F,T) BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Toshiba Semiconductor and Storage combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for RN4986(T5L,F,T) through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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