RQ3G150GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CHANNEL 40V 39A 8HSMT
$1.35
Available to order
Reference Price (USD)
3,000+
$0.45248
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with RQ3G150GNTB, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RQ3G150GNTB meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
IRFI530GPBF
Alpha & Omega Semiconductor Inc.
AO4576
Vishay Siliconix
SIS444DN-T1-GE3
onsemi
NTMTS0D4N04CLTXG
Infineon Technologies
BSP179H6327XTSA1
onsemi
NDD03N60ZT4G
Infineon Technologies
IPA65R600E6XKSA1
NXP USA Inc.
PMN52XP115
Fairchild Semiconductor
FQP11N50CF
Vishay Siliconix