RQ3L070ATTB
Rohm Semiconductor
Rohm Semiconductor
PCH -60V -25A, HSMT8, POWER MOSF
$1.55
Available to order
Reference Price (USD)
1+
$1.55000
500+
$1.5345
1000+
$1.519
1500+
$1.5035
2000+
$1.488
2500+
$1.4725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with RQ3L070ATTB, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RQ3L070ATTB for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Taiwan Semiconductor Corporation
TSM070NA04LCR RLG
Nexperia USA Inc.
PSMN0R9-30ULDX
IXYS
IXTR48P20P
Fairchild Semiconductor
FQPF4N50
Nexperia USA Inc.
PMPB27EP,115
Infineon Technologies
IAUT240N08S5N019ATMA1
Diodes Incorporated
DMP3028LFDE-13
onsemi
NTMSD6N303R2G
onsemi
CPH6337-TL-E
Nexperia USA Inc.