RQ6E080AJTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 8A TSMT6
$0.84
Available to order
Reference Price (USD)
1+
$0.84000
500+
$0.8316
1000+
$0.8232
1500+
$0.8148
2000+
$0.8064
2500+
$0.798
Exquisite packaging
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Boost your electronic applications with RQ6E080AJTCR, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RQ6E080AJTCR meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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