RQ7E110AJTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 11A TSMT8
$1.02
Available to order
Reference Price (USD)
3,000+
$0.35380
6,000+
$0.34160
Exquisite packaging
Discount
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RQ7E110AJTCR by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RQ7E110AJTCR ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
- Vgs(th) (Max) @ Id: 1.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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