RTQ035N03HZGTR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 3.5A TSMT6
$0.73
Available to order
Reference Price (USD)
1+
$0.73000
500+
$0.7227
1000+
$0.7154
1500+
$0.7081
2000+
$0.7008
2500+
$0.6935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with RTQ035N03HZGTR, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RTQ035N03HZGTR meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IMW120R030M1HXKSA1
Vishay Siliconix
IRF840LCLPBF
Renesas Electronics America Inc
RJK1055DPB-00#J5
IXYS
IXTA340N04T4
onsemi
FDMS86150ET100
onsemi
NDD03N40Z-1G
Vishay Siliconix
SIR870ADP-T1-RE3
Vishay Siliconix
SIHU5N80AE-GE3
Infineon Technologies
IPB034N06N3G
Diodes Incorporated