RUM002N02T2L
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 200MA VMT3
$0.39
Available to order
Reference Price (USD)
8,000+
$0.05600
16,000+
$0.04760
24,000+
$0.04480
56,000+
$0.04200
200,000+
$0.03920
Exquisite packaging
Discount
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Rohm Semiconductor presents RUM002N02T2L, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RUM002N02T2L delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VMT3
- Package / Case: SOT-723
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