S200-50
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 110V 30MHZ 55HX
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Designed for the future, Microsemi Corporation's S200-50 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 110V
- Frequency - Transition: 1.5MHz ~ 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 12dB ~ 14.5dB
- Power - Max: 320W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 30A
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55HX
- Supplier Device Package: 55HX