SCT2080KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 40A TO247
$24.82
Available to order
Reference Price (USD)
1+
$22.56000
10+
$20.80800
25+
$19.87320
100+
$17.76880
360+
$16.95050
Exquisite packaging
Discount
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Optimize your electronic systems with SCT2080KEC, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT2080KEC provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 4V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 262W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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