SCT2080KEGC11
Rohm Semiconductor
Rohm Semiconductor
DIODE N-CH 1200V 40A TO-247AC
$27.25
Available to order
Reference Price (USD)
1+
$27.25000
500+
$26.9775
1000+
$26.705
1500+
$26.4325
2000+
$26.16
2500+
$25.8875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SCT2080KEGC11, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT2080KEGC11 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 4V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 262W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPP60R160P6XKSA1
Vishay Siliconix
SI4848ADY-T1-GE3
Taiwan Semiconductor Corporation
TSM60NB1R4CH C5G
STMicroelectronics
STI24NM60N
IXYS
IXFT100N30X3HV
Vishay Siliconix
IRFBC30PBF-BE3
Microchip Technology
APL502J
Infineon Technologies
IRFS3004TRL7PP
Infineon Technologies
IPD50N08S413ATMA1
Microchip Technology