IRFBC30PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 3.6A TO220AB
$1.81
Available to order
Reference Price (USD)
1+
$1.81000
500+
$1.7919
1000+
$1.7738
1500+
$1.7557
2000+
$1.7376
2500+
$1.7195
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRFBC30PBF-BE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRFBC30PBF-BE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Microchip Technology
APL502J
Infineon Technologies
IRFS3004TRL7PP
Infineon Technologies
IPD50N08S413ATMA1
Microchip Technology
APTM20SKM04G
Infineon Technologies
IPD040N03LGBTMA1
Infineon Technologies
IPL60R2K1C6SATMA1
Infineon Technologies
IPI50N10S3L16AKSA1
Infineon Technologies
IMBG120R220M1HXTMA1
STMicroelectronics
STL11N65M5
Diodes Incorporated