SCT2H12NZGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1700V 3.7A TO3PFM
$7.85
Available to order
Reference Price (USD)
1+
$5.95000
10+
$5.37500
30+
$5.12500
120+
$4.45000
270+
$4.25000
510+
$3.87500
1,020+
$3.50000
Exquisite packaging
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Discover SCT2H12NZGC11, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PFM
- Package / Case: TO-3PFM, SC-93-3
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