SCT3030KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 72A TO247N
$80.76
Available to order
Reference Price (USD)
1+
$63.09000
10+
$59.26500
25+
$57.35360
100+
$53.52980
Exquisite packaging
Discount
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Boost your electronic applications with SCT3030KLHRC11, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SCT3030KLHRC11 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 339W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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