SCT3040KLHRC11
Rohm Semiconductor

Rohm Semiconductor
SICFET N-CH 1200V 55A TO247N
$59.02
Available to order
Reference Price (USD)
1+
$44.71000
10+
$41.71500
25+
$39.96680
100+
$36.21980
Exquisite packaging
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Discover high-performance SCT3040KLHRC11 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SCT3040KLHRC11 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 262W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3