IPDD60R125CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 27A HDSOP-10
$6.06
Available to order
Reference Price (USD)
1+
$6.06000
500+
$5.9994
1000+
$5.9388
1500+
$5.8782
2000+
$5.8176
2500+
$5.757
Exquisite packaging
Discount
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Boost your electronic applications with IPDD60R125CFD7XTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPDD60R125CFD7XTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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