SCT4062KEC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 62M, 3-PIN THD, TRENCH-ST
$15.82
Available to order
Reference Price (USD)
1+
$15.82000
500+
$15.6618
1000+
$15.5036
1500+
$15.3454
2000+
$15.1872
2500+
$15.029
Exquisite packaging
Discount
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Boost your electronic applications with SCT4062KEC11, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SCT4062KEC11 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
- Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Vgs (Max): +21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 115W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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