SCTH90N65G2V-7
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 90A H2PAK-7
$36.73
Available to order
Reference Price (USD)
1+
$36.73000
500+
$36.3627
1000+
$35.9954
1500+
$35.6281
2000+
$35.2608
2500+
$34.8935
Exquisite packaging
Discount
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Discover high-performance SCTH90N65G2V-7 from STMicroelectronics, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SCTH90N65G2V-7 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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