Shopping cart

Subtotal: $0.00

SE12DB-M3/I

Vishay General Semiconductor - Diodes Division
SE12DB-M3/I Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3.2A TO263AC
$0.92
Available to order
Reference Price (USD)
4,000+
$0.44010
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Global Power Technology-GPT

G4S06510HT

Panjit International Inc.

S8K_R1_00001

Vishay General Semiconductor - Diodes Division

S1M-M3/61T

Panjit International Inc.

SX34-AU_R1_000A1

Microchip Technology

JAN1N6622US/TR

Vishay General Semiconductor - Diodes Division

VS-8EVH06HM3/I

Taiwan Semiconductor Corporation

RS3J

Micro Commercial Co

FR2K-LTP

Rohm Semiconductor

RBR3L40ATE25

Vishay General Semiconductor - Diodes Division

BYS10-45HM3_A/I

Top