SGF23N60UFTU
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.31
Available to order
Reference Price (USD)
360+
$2.05686
Exquisite packaging
Discount
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Upgrade your power electronics with SGF23N60UFTU Single IGBTs by Fairchild Semiconductor, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Fairchild Semiconductor for top-quality components that meet global standards. Request a quote now to learn more about how SGF23N60UFTU can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 23 A
- Current - Collector Pulsed (Icm): 92 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
- Power - Max: 75 W
- Switching Energy: 115µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 17ns/60ns
- Test Condition: 300V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
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