SH8M51GZETB
Rohm Semiconductor
Rohm Semiconductor
4V DRIVE NCH+PCH MOSFET. SH8M51
$1.78
Available to order
Reference Price (USD)
1+
$1.78000
500+
$1.7622
1000+
$1.7444
1500+
$1.7266
2000+
$1.7088
2500+
$1.691
Exquisite packaging
Discount
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The SH8M51GZETB from Rohm Semiconductor is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SH8M51GZETB offers the reliability you need. Contact us now to discuss how we can support your project requirements with Rohm Semiconductor s cutting-edge solutions.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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