SI1442DH-T1-GE3
Vishay Siliconix

Vishay Siliconix
MOSFET N-CH 12V 4A SC70-6
$0.47
Available to order
Reference Price (USD)
3,000+
$0.10962
6,000+
$0.10382
15,000+
$0.09512
30,000+
$0.08933
75,000+
$0.08063
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI1442DH-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI1442DH-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363