SQD25N06-22L_T4GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 25A TO252AA
$1.65
Available to order
Reference Price (USD)
2,500+
$0.63525
5,000+
$0.60349
12,500+
$0.58080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SQD25N06-22L_T4GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SQD25N06-22L_T4GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI5424DC-T1-GE3
Infineon Technologies
IAUC120N06S5N017ATMA1
Infineon Technologies
IPB120N06S402ATMA2
Alpha & Omega Semiconductor Inc.
AOB2500L
NXP USA Inc.
BUK7E11-55B,127
Renesas Electronics America Inc
UPA2750GR(1)-E1-A
Panjit International Inc.
PJA3405-AU_R1_000A1
onsemi
MPF4391RLRA
Taiwan Semiconductor Corporation
TSM090N03CP ROG
STMicroelectronics