SI1443EDH-T1-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 4A/4A SC70-6
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI1443EDH-T1-BE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI1443EDH-T1-BE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Infineon Technologies
AUIRF1018E
Fairchild Semiconductor
HUF76009D3ST
Infineon Technologies
AUIRF7799L2TR
Panjit International Inc.
PJQ5444-AU_R2_000A1
onsemi
FQPF30N06L
Toshiba Semiconductor and Storage
TK560A60Y,S4X
Rohm Semiconductor
RQ3L070ATTB
Taiwan Semiconductor Corporation
TSM070NA04LCR RLG
Nexperia USA Inc.
PSMN0R9-30ULDX
IXYS