SI1926DL-T1-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 60V 0.37A SOT363
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
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The SI1926DL-T1-BE3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SI1926DL-T1-BE3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), 370mA (Tc)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
- Power - Max: 300mW (Ta), 510mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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