SI2314EDS-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 3.77A SOT23-3
$0.87
Available to order
Reference Price (USD)
3,000+
$0.30510
6,000+
$0.28530
15,000+
$0.27540
30,000+
$0.27000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SI2314EDS-T1-E3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SI2314EDS-T1-E3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
FDS7060N7
Infineon Technologies
IPP80R1K2P7
onsemi
FDMS86103L
STMicroelectronics
STS6P3LLH6
Renesas Electronics America Inc
NP36P04SDG-E1-AY
Toshiba Semiconductor and Storage
TK100L60W,VQ
STMicroelectronics
STP2N62K3
Infineon Technologies
IPI80N04S303AKSA1
NXP Semiconductors
PSMN8R5-100ESFQ
Renesas Electronics America Inc