SI2316DS-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 2.9A SOT23-3
$0.86
Available to order
Reference Price (USD)
3,000+
$0.27466
6,000+
$0.25572
15,000+
$0.24625
30,000+
$0.24108
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SI2316DS-T1-E3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SI2316DS-T1-E3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STF6N65K3
Fairchild Semiconductor
IRFW610BTMFP001
Texas Instruments
CSD16414Q5
Vishay Siliconix
SI4864DY-T1-GE3
Fairchild Semiconductor
FCPF1300N80ZYD
Wolfspeed, Inc.
C3M0015065K
Vishay Siliconix
SI7858ADP-T1-GE3
onsemi
NTMFS5C410NLT1G
STMicroelectronics
STB100N10F7
Alpha & Omega Semiconductor Inc.