SI2323CDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 6A SOT23-3
$0.78
Available to order
Reference Price (USD)
3,000+
$0.32205
6,000+
$0.30115
15,000+
$0.29070
30,000+
$0.28500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI2323CDS-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI2323CDS-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXFZ520N075T2
Diodes Incorporated
DMN3025LFDF-7
Taiwan Semiconductor Corporation
TSM045NB06CR RLG
Vishay Siliconix
SISA66DN-T1-GE3
Infineon Technologies
IRFI4410ZPBF
IXYS
IXFA12N65X2-TRL
IXYS
IXTP80N10T
Vishay Siliconix
IRF620PBF
Panjit International Inc.
PJD16P06A_L2_00001
Diodes Incorporated