SI3445DV
Fairchild Semiconductor
Fairchild Semiconductor
P-CHANNEL MOSFET
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SI3445DV, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI3445DV meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
onsemi
NVTFS4C13NTWG
Toshiba Semiconductor and Storage
TPN2R805PL,L1Q
Vishay Siliconix
SUP85N10-10-E3
IXYS
IXFH24N60X
Microchip Technology
TN2540N3-G
STMicroelectronics
STL7LN80K5
Renesas Electronics America Inc
UPA652TT-E1-A
Nexperia USA Inc.
PSMN4R3-80ES,127
PN Junction Semiconductor
P3M07013K4
Rohm Semiconductor