SI3911DV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 20V 1.8A 6TSOP
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Enhance your electronic applications with Vishay Siliconix s SI3911DV-T1-E3, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of SI3911DV-T1-E3 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.8A
- Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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