SI4431CDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 9A 8SO
$0.80
Available to order
Reference Price (USD)
2,500+
$0.27120
5,000+
$0.25360
12,500+
$0.24480
25,000+
$0.24000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI4431CDY-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI4431CDY-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SI4840BDY-T1-GE3
Nexperia USA Inc.
BUK661R9-40C,118
Toshiba Semiconductor and Storage
TPN30008NH,LQ
Infineon Technologies
IRF7862TRPBF
IXYS
IXTT240N15X4HV
Infineon Technologies
IPB60R060C7ATMA1
PN Junction Semiconductor
P3M06060G7
Infineon Technologies
IRFP4468PBF
IXYS
IXTA3N120-TRR
STMicroelectronics