SI4442DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 15A 8SO
$3.29
Available to order
Reference Price (USD)
2,500+
$1.76619
5,000+
$1.70404
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SI4442DY-T1-E3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
FDMC8854
IXYS
IXFA30N60X
Infineon Technologies
IAUZ30N10S5L240ATMA1
Alpha & Omega Semiconductor Inc.
AO4402
IXYS
IXFN400N15X3
IXYS
IXFX34N80
Nexperia USA Inc.
PXN5R4-30QLJ
Infineon Technologies
IRFIZ34NPBF
Infineon Technologies
SPB100N03S203T
Micro Commercial Co