SI4485DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 6A 8SO
$0.66
Available to order
Reference Price (USD)
2,500+
$0.27120
5,000+
$0.25360
12,500+
$0.24480
25,000+
$0.24000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SI4485DY-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI4485DY-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SI3474DV-T1-BE3
onsemi
PCP1402-TD-H
Fairchild Semiconductor
IRFS830B
STMicroelectronics
STF10N62K3
NXP USA Inc.
BUK95180-100A,127
onsemi
FQB34N20TM-AM002
Vishay Siliconix
IRFI740GLCPBF
Panjit International Inc.
PJQ5427_R2_00001
Toshiba Semiconductor and Storage
TK39A60W,S4VX
Toshiba Semiconductor and Storage