SI4599DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 40V 6.8A 8SOIC
$0.95
Available to order
Reference Price (USD)
2,500+
$0.38985
5,000+
$0.36455
12,500+
$0.35190
25,000+
$0.34500
Exquisite packaging
Discount
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The SI4599DY-T1-GE3 from Vishay Siliconix is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SI4599DY-T1-GE3 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Vishay Siliconix s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
- Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
- Power - Max: 3W, 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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