SI4670DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 25V 8A 8-SOIC
$0.56
Available to order
Reference Price (USD)
2,500+
$0.55760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic applications with Vishay Siliconix s SI4670DY-T1-GE3, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of SI4670DY-T1-GE3 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
- Power - Max: 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Infineon Technologies
AUIRF7379QTR
onsemi
NVMFD6H846NLT1G
Diotec Semiconductor
DI048N04PQ2-AQ
Microchip Technology
MSCSM120TAM16CTPAG
Infineon Technologies
IPG20N06S2L35AATMA1
Infineon Technologies
IPA50R350CP
Toshiba Semiconductor and Storage
TPC8408,LQ(S
Toshiba Semiconductor and Storage
SSM6P36TU,LF
Panjit International Inc.
PJX138K_R1_00001
Diodes Incorporated